Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics
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چکیده
منابع مشابه
Retention Model of TaO/HfOx and TaO/AlOx RRAM with Self-Rectifying Switch Characteristics
A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because the LRS during the SET process is limited by the internal resistor layer. However, if TaO/AlO x el...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2017
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-017-2179-5